By Ivan A. Parinov
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Additional resources for Advanced Nano- and Piezoelectric Materials and Their Applications
00126 cm2 . Figure 11. Dependence of C/Cox on gate voltage for C-face capacitor on p-type SiC. 00126 cm2 . Figure 12. Oxide thickness under various partial pressures of water vapor. Oxidation time is 5 hours: 1 – theoretical curve, 2 – experimental curve . Development and Study of Silicon Dioxide Nanostructured Films … 39 Table 2. 3 49 52 32 - The measurements of volt-farad characteristics were performed in the dark, at room temperature and a frequency of 1 MHz. By measuring, the voltage at the equilibrium point changed from inversion/depletion to beneficiating.
Spectral dependences of absorption (а), reflection (R) and transmission () coefficients for SiО2: 1 absorption, 2 transmission, 3 reflection. 22 V. V. Polyakov 2. 1. Characteristics of Processing SiO2 Films during Rapid Thermal Annealing In most cases, for forming the silicon dioxide films with stable electrical and physical parameters, a 1000-1200 ℃ temperature range is used [23, 24]. At higher temperatures, the initial stage of 57 nanometer film growth is quite rapid, which does not allow one to precisely control the oxidation process.
V. Polyakov doped SiC wafers. The epitaxial layer doping degree for both types of wafers was (4 1015) cm3. The wafers were placed inside a quartz tube under 800 C. By rising the temperature up to 1150 C, oxidation in dry (DN2OG) or wet (WN2OG)N2O atmosphere was carried out during 4 hours with the speed of the gas flow being as high as 500 ml/min. 5 hours (DWN2OG) at the same temperature and speed of gas flow. 5 hours. 14 103) cm2. High-frequency voltage-capacitance characteristic was subsequently measured under room temperature, the signal amplitude achieving 20 mV.
Advanced Nano- and Piezoelectric Materials and Their Applications by Ivan A. Parinov