By Professor Daniela Dragoman, Professor Mircea Dragoman (auth.)
Advanced Optoelectronic units provides the 1st unified presentation of the foremost advancements during this box, either when it comes to their actual history and with appreciate to functions. It covers units in keeping with the homes of quantum wells and fiber optics including their functions in optical communications and sign processing. additionally it is a finished mathematical therapy and cutting-edge presentation of the newest examine in utilized optoelectronics and semiconductor physics. the 2 assorted and complementary actual theories that describe optoelectronic units, particularly the electromagnetic box concept and quantum mechanics, are handled together in one of these means as to bare hyperlinks and analogies at any place attainable. this gives a greater figuring out of the elemental tactics. for that reason, the publication isn't easily a listing of other unique units yet a presentation of an excellent number of units in line with an analogous, or related, actual phenomena.
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Additional info for Advanced Optoelectronic Devices
In particular, for gain modulated DFB lasers such a composed grating can be realized by a selective implantation with a Ga focused ion beam. 14 nm; or, with AI = 92 nm, A 2 = 96 nm, with ql' q2 independently varying between 1 and 3, a 44 1. 8 nm has been obtained with the same variation step of the gratings of I nm. DFB lasers with longitudinal variation of the coupling constant along the propagation axis have recently shown remarkable properties (Boucher et a1. 1997). In these mixed-coupled tapered gratings both the index- and gain-coupling constants depend on Z as q(z)exp(iqJJ and Cg(z)exp(iqJg), respectively, giving rise to qualitatively new effects.
A conventional Bragg reflector used as a mirror usually consists of altemating layers with high and low refractive indices, the optical lengths of the layers being equal to A, /4. The CL parameter which determines the reflection coefficient is in this case a function of the number of pairs and the difference between the refractive indices in the altemating layers. The phase difference between the rays reflected from the interfaces of a layer with refractive index n and length I, for a normal incidence upon the structure, must be - exp( - 2ikon/) = - exp( - 2ikon( A, /4n)) = - exp( - in) (the light reflected within the high index layer does not suffer any phase shift at reflection, whereas that reflected within the low index layer undergoes a phase shift of 180°).
The frequency ranges for which Icos(ßA)I> 1 are called stopbands. 36) determines ß from the condition imposed by the periodic behavior after a stratification period. 36) if A is sufficiently large (A» ,1,). With decreasing A, the coupling between waveguide periods become important and each mode splits into a number of submodes equal to the number of periodic sequences and changes itself into a band. This behavior is to be expected from the results of solid state physics, since a periodic dielectric structure is similar to a periodic sequence of elementary cells in a crystal.
Advanced Optoelectronic Devices by Professor Daniela Dragoman, Professor Mircea Dragoman (auth.)