By C.K Maiti, G.A Armstrong
The main major characteristic of this paintings is that it combines 3 special subject matters - expertise, gadget layout and simulation, and functions - in a entire manner.
This ebook is meant to be used through senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists all for semiconductor gadget study and improvement for RF functions.
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Additional info for Applications of silicon-germanium heterostructure devices
Dev. 44 391–407 Chapter 2 FILM GROWTH AND MATERIAL PARAMETERS Silicon-based heterostructures have come a long way from the use of strain as a parameter for bandgap engineering, to the present state of devices/circuits with enhanced performance compared to those obtained in bulk-Si and competing III–V compound semiconductors. Apart from the inherent performance enhancement, undoubtedly the main attraction of high mobility Si/SiGe, SiGe/strained-Si and Si/SiGeC heterostructures is their basic compatibility with standard Si processing.
Mechanical equilibrium theory assumes the existence of a threading dislocation. The energy required to glide a threading dislocation into a misﬁt dislocation is balanced with the strain energy from the lattice mismatch to deﬁne the critical thickness as a function of lattice mismatch. 3. Critical layer thickness versus Ge content showing stable, metastable and relaxed ranges of Si1−x Gex layers on Si. (After Schuppen A et al 1995 J. Mater. , Mater. Electron. ) relieve the strain energy. 042x. For a detailed derivation of the critical thickness, the reader may refer to an excellent review by Jain and Hayes .
For the last few years, experimental studies on strained-SiGe materials have resulted in a signiﬁcant progress in the understanding of strain relaxation kinetics and optimization of graded buﬀer layers with respect to relaxation and surface morphology [23–27]. These parameters are of crucial importance as they are interdependent and are aﬀected by growth temperature, grading rate and composition. 5. Cross-sectional transmission electron micrograph and secondary ion mass spectrometry proﬁle of a graded SiGe buﬀer layer on an Si substrate.
Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong